10th International Conference on Multiscale Materials Modeling (MMM 10)

October 2-7, 2022, Baltimore, USA

Symposium #11: Materials for Microelectronics: Manufacturing Process, Implantation and Reliability, from Atomic Scale to Industrial Design is co-organized by MUNDFAB team member A. Hemeryck of CNRS-LAAS. The symposium will bring together researchers working on materials for microelectronics. It will focus on theory, simulations and experiments for manufacturing process, implantation and reliability and how modeling and simulations can predict their impact on macroscopic properties of achieved devices. The aim of this symposium is to address those issues at different space and times scales with the additional objective to bridge scales from atomistic-to-continuum approaches in the scope of industrial applications.

The following invited presentation reports on results from MUNDFAB:

F. Cristiano et al.
Advanced Doping Processes in Group IV Semiconductors: Understanding and Modelling of Defects Formation and Dopant Activation

51st European Solid-State Device Research Conference (ESSDERC 2021)

September 6 - November 30, 2021, fully virtual conference

In the Session Simulation & Modeling of Defects & Traps the following papers report on results from MUNDFAB:

L. Cvitkovich et al.
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface

D. Milardovich et al.
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide

C. Wilhelmer et al.
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network

In the Educational Event Atomistic Simulations Supporting New materials & Process Developments, which is co-organized by MUNDFAB team member D. Rideau of STMicroelectronics, speakers from MUNDFAB deliver the following lectures:

A. Hemeryck
What Multi-level Strategy for Modelling Processes and Defects in Semiconductors at the Atomic Scale? Current Approaches, Necessary Developments and new Needs

M. Jech
Modeling of Bulk and Interface Defects for Reliability Prediction on the Atomistic Scale

Journées de la Matière Condensée 17 (JMC17)

August 24 - 27, 2021, all-virtual

The following paper reports on results from MUNDFAB:

C. Jara et al.
Study of Ni Silicides Formation Processes on Si(100) Surface Using Ab-Initio Calculations

25th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020)

September 23 - October 6, 2020, all-virtual conference

The following papers report on results from MUNDFAB:

P.L. Julliard et al.,
Implant Heating Contribution to Amorphous Layer: a KMC Approach (Presentation 3-3)

I. Bejenari et al.
Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires (Presentation 4-2)

A. Sciuto et al.,
Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections (Presentation 4-3)

D. Milardovich et al.,
Machine Learning Prediction of Formation Energies in a-SiO2 (Presentation 15-2)