Modeling Unconventional Nanoscaled Device FABrication
Modeling Unconventional Nanoscaled Device FABrication

Events

2023

2022

J2N Journées Nationales Nanofils Semiconducteurs 2022

September 28-30, 2022, Nice

The following presentation reports on results from MUNDFAB:

J. Müller et al.
Advances in Top-down Fabrication and Processing of Vertical SiGe Nanowire Arrays for Future Nanoelectronics Applications

23rd International Conference on Ion Implantation Technology (IIT 2022)

September 25-29, 2022, San Diego, USA

The following presentations report on results from MUNDFAB:

F. Cristiano et al.
Defects and Dopant Activation in Laser Annealed Group IV Semiconductors (invited)

A. Johnsson
Continuum Simulations of the Evolution of Faulted and Perfect Dislocation Loops in Silicon During Post-implantation Annealing

P.L. Julliard et al.
Characterization of Structural Defects Induced by Heated Implantations and Annealing Process

MNE Eurosensors 2022

September 19-23, 2022, Leuven, Belgium

The following presentation reports on results from MUNDFAB:

J. Müller et al.
Top-down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics Applications

52nd European Solid-State Device Research Conference (ESSDERC 2022)

September 19-22, 2022, Milan, Italy

The following presentations report on results from MUNDFAB:

C. Wilhelmer et al.
Metastability of Negatively Charged Hydroxyl-E′ Centers and their Potential Role in Positive Bias Temperature Instabilities

D. Waldhoer et al.
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study

2022 Fall Meeting of the European Materials Research Society (E-MRS)

September 19-22, 2022, Warsaw, Poland

The following presentations report on results from MUNDFAB:

P. Michalowski et al.
Secondary Ion Mass Spectrometry Quantification of Boron Distribution in Silicon Nanowires

D. Raciti et al.
Atomically-resolved Modeling of Excimer Laser Annealed Silicon and SiGe Alloys

D. Raciti et al.
LKMC Modeling of CVD Epitaxy of SiGe-based Structures

19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST)

September 10-16, 2022, Mondsee Castle, Austria

The following presentations report on results from MUNDFAB:

A. LaMagna et al. (invited presentation)
Modeling of Excimer Laser Annealing Processes in Future Nanoscale Devices

G. Calogero et al.
Multiscale Aomistic Modeling of Ultrafast Melting in Laser Annealing Processes
This contribution was awarded with a Young Scientist Award.

D. Raciti et al.
MulSKIPS: A Tool for Simulating CVD Epitaxy of SiGe Structures

2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)

September 6-8, 2022, Granada, Spain

The following presentations report on results from MUNDFAB:

P.L. Julliard et al.
Contribution of Kinetic Monte Carlo in a Multi-scale Modeling Framework

D. Milardovich et al.
Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials

C. Rossi et al.
Performance of Vertical Gate-All-Around Nanowire p-MOS Transistors Determined by Boron Depletion during Oxidation

L. Treps et al.
Atomic-scale Study of Silane and Hydrogen Adsorptions Competition during Si Epitaxy

Spring Meeting of the Materials Research Society (MRS) 2022

May 8-13, 2022, Honolulu, Hawai

The following presentation reports on results from MUNDFAB:

S.-H. Lee et al.
Cost-Efficient Training of a Neural Network Potential by Means of Active Learning for Fast and Accurate Molecular Dynamics Simulations

2021

51st European Solid-State Device Research Conference (ESSDERC 2021)

September 6 - November 30, 2021, fully virtual conference

In the Session Simulation & Modeling of Defects & Traps the following papers report on results from MUNDFAB:

L. Cvitkovich et al.
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface

D. Milardovich et al.
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide

C. Wilhelmer et al.
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network

In the Educational Event Atomistic Simulations Supporting New materials & Process Developments, which is co-organized by MUNDFAB team member D. Rideau of STMicroelectronics, speakers from MUNDFAB deliver the following lectures:

A. Hemeryck
What Multi-level Strategy for Modelling Processes and Defects in Semiconductors at the Atomic Scale? Current Approaches, Necessary Developments and new Needs

M. Jech
Modeling of Bulk and Interface Defects for Reliability Prediction on the Atomistic Scale

Journées de la Matière Condensée 17 (JMC17)

August 24 - 27, 2021, all-virtual

The following paper reports on results from MUNDFAB:

C. Jara et al.
Study of Ni Silicides Formation Processes on Si(100) Surface Using Ab-Initio Calculations

2020

25th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020)

September 23 - October 6, 2020, all-virtual conference

The following papers report on results from MUNDFAB:

P.L. Julliard et al.
Implant Heating Contribution to Amorphous Layer: a KMC Approach (Presentation 3-3)

I. Bejenari et al.
Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires (Presentation 4-2)

A. Sciuto et al.
Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections (Presentation 4-3)

D. Milardovich et al.
Machine Learning Prediction of Formation Energies in a-SiO2 (Presentation 15-2)