Public deliverables can be found here.

Pubications from the project will be listed here once they have been published. You are kindly invited to revisit this page to check for updates.

Below you will find selected publications describing background work by the project partners.

Publications on Partners' Background Work

Simulation Methods and Models

A. Burenkov, V. Belko, J. Lorenz, Self-heating of Nano-scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations, Proceedings 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2013, p. 305,

G. Fisicaro, C. Bongiorno, I. Deretzis, F. Giannazzo, F. La Via, F. Roccaforte, M. Zielinski, M. Zimbone, A. La Magna, Genesis and Evolution of Extended Defects: The Role of Evolving Interface Instabilities in Cubic SiC, Applied Physics Reviews 7 (2020) 021402,

G. Fisicaro, L. Pelaz, P. Lopez, and A. La Magna, Kinetic Monte Carlo Simulations for Transient Thermal Fields: Computational Methodology and Application to the Submicrosecond Laser Processes in Implanted Silicon, Phys. Rev. E 86 (2012) 036705,

A. La Magna, A. Alberti, E. Barbagiovanni, C. Bongiorno, M. Cascio, I. Deretzis, F. La Via, and E. Smecca, Simulation of the Growth Kinetics in Group IV Compound Semiconductors, Phys. Status Solidi A 216 (2019) 1800597,

A. Payet, B. Sklenard, J.-C. Barbe, P. Batude, C. Tavernier, P. Gergaud, I. Martin-Bragado, An Atomistic Investigation of the Composition Dependence in SiGe Alloys during Solid Phase Epitaxial Regrowth, Acta Materialia 106 (2016) 290,

P. Pichler, Intrinsic Point Defects, Impurities, and their Diffusion in Silicon, Springer Vienna, 2004, further information

N. Salles, N. Richard, N. Mousseau and A.Hemeryck, Strain-driven Diffusion Process during Silicon Oxidation Investigated by Coupling Density Functional Theory and Activation Relaxation Technique, Journal of Chemical Physics 147 (2017) 054701,

G. Herrero-Saboya, L. Martin-Samos, A. Jay, A. Hémeryck, N. Richard, A Comprehensive Theoretical Picture of E Centers in Silicon: From Optical Properties to Vacancy-mediated Dopant Diffusion, Journal of Applied Physics 127 (2020) 085703,

Devices and Integration

L. Brunet et al., Breakthroughs in 3D Sequential Technology, Proceedings IEDM 2018, p. 153,

Y. Guerfi, G. Larrieu,Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around, Nanoscale Research Letters 11 (2016) 210,

S. Kerdiles et al., Sequential 3D Process Integration: Opportunities for Low Temperature Processing, ECS Transactions 80 (2017) 215,

G. Larrieu, Y. Guerfi, X.L. Han, N. Clément, Sub-15nm Gate-all-around Field Effect Transistors on Vertical Silicon Nanowires, Solid-State Electronics 130 (2017) 9-14,

J. Lorenz, E. Bär, S. Barraud, A.R. Brown, P. Evanschitzky, F. Klüpfel, L. Wang, Process Variability - Technological Challenge and Design Issue for Nanoscale Devices, Micromachines 10 (2019) 6,

Laser Annealing

F. Cristiano, M. Shayesteh, R. Duffy, K. Huet, F. Mazzamuto, Yang Qiu, M. Quillec, H.H. Henrichsen, P.F. Nielsen, D.H. Petersen, A. La Magna, G. Caruso, S. Boninelli, Defect Evolution and Dopant Activation in Laser Annealed Si and Ge, Materials Science in Semiconductor Processing 42 (2016) 188-195,,

L. Dagault et al., Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers, ECS J. Solid-State Sci. Technol. 8 (2019) P202,

G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez, M. Italia, K. Huet, F. Cristiano, Z. Essa, Q. Yang, E. Bedel-Pereira, M. Quillec, A. L. Magna, Kinetic Monte Carlo Simulations of Boron Activation in Implanted Si under Laser Thermal Annealing, Appl. Phys. Express 7 (2014) 021301,

K. Huet et al., Pulsed Laser Annealing for Advanced Technology Nodes: Modeling and Calibration, Appl. Surf. Sci. 505 (2020) 144470,

Atomic Layer Deposition (ALD)

Ιn situ N 2 -NH 3 Plasma Pre-treatment of Silicon Substrate Enhances the Initial Growth and Restricts the Substrate Oxidation during Alumina ALD, G. Gakis, H. Vergnes, F. Cristiano, Y. Tison, C. Vahlas, B. Caussat, A. Boudouvis, E. Scheid, Journal of Applied Physics 126 (2019) 125305,

Characterization Methods

R. Daubriac, E. Scheid, H. Rizk, R. Monflier, S. Joblot, R. Beneyton, P. Acosta Alba, S. Kerdilès, F. Cristiano, A Differential Hall Effect Measurement Method with Sub-nanometre Resolution for Active Dopant Concentration Profiling in Ultrathin Doped Si 1− x Ge x and Si Layers,  Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology, 2018, 9, pp.1926 - 1939,

R. Makarem, F. Cristiano, D. Muller, P.F. Fazzini, An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale, Microscopy and Microanalysis 26(1) (2020) 76-85,

P.P. Michalowski, P. Caban, J. Baranowski, Secondary Ion Mass Spectrometry Investigation of Carbon Grain Formation in Boron Nitride Epitaxial Layers with Atomic Depth Resolution, J. Anal. At. Spectrom. 34 (2019) 848,

P.P. Michalowski, S. Zlotnik, M. Rudzinski, Three Dimensional Localization of Unintentional Oxygen Impurities in Gallium Nitride, Chem. Commun. 55 (2019) 11539,

P.P. Michalowski, W. Kaszub, P. Knyps, K. Rosinski, B. Stanczyk, K. Przyborowska, E. Dumiszewska, A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices, ACS Appl. Mater. Interfaces 10 (2018) 43,