WP6: Simulation toolchain and benchmarking

Transmission electron micrographs of a vertical nanowire array transistor, which is one of the benchmarks that will be used for evaluating the simulation toolchains to be developed in this work package.

Results of a well calibrated MulSKIPS simulation of a Si CVD growth, at source and drain of a FDSOI device, are shown in the form of novel surface atoms on the right side of the gate stack. Thanks to the integration strategy developed in WP6, the novel grown region, in orange, could be imported in the initial structure in the Sentaurus format, allowing further simulations in Sentaurus TCAD.

In the industry, Sentaurus Process and Sentaurus Device of Synopsys are considered the gold standard of TCAD process and device simulation world-wide. Some of the models developed in WP2 to WPS of the MUNDFAB project can be implemented and used directly in Sentaurus TCAD using the flexibility of their scripting languages.

Other models require the use of own tools, such as the open-source Kinetic Monte Carlo super-lattice tool MulSKIPS, since Sentaurus TCAD does not offer the required capabilities. Integrating them into the Sentaurus TCAD workflow, WP6 enables accurate simulations of advanced process steps as required by next generations' devices and structures.

WP6 will not only assess the accuracy of these models but will also demonstrate that they can be used in real test applications.

The following tasks are covered by this work package:

Establishment of a full TCAD workflow on the basis of Sentaurus Process and Sentaurus Device
Integration of own tools with features not available in commercial tools into the TCAD workflow
Application of the models in real test applications
Correlation with measurements, evaluation of the accuracy on final applications

WP6 coordinator: Denis Rideau, STMicroelectronics