MUNDFAB - Modeling Unconventional Nanoscaled Device FABrication

Snapshot of a LKMC simulation of 3C-SiC epitaxial growth process obtained with the CNR LKMC tool developed within the H2020 project CHALLENGE. The simulation box is about 0.6 × 0.6 × 0.6 μm^3, only surface and defective structures (both point defects and dislocation loops associated to planar defects) are shown.

Simulation software will help nanoscale architectures realise the promise of More than Moore

For the last 50 years, shrinking transistors have enabled more and more processing capacity to be put on the same size chips, following Intel co-founder Gordon Moore's predictions in the 1960s. Moore's law is reaching its physical and economic limits – our future virtually unlimited interconnectedness will depend on a paradigm shift.

Much as high-rises are a solution to urban growth, emerging 3D sequential integration could alleviate the problems faced by 2D CMOS transistor technology. Bringing this architecture down to the nanoscale could additionally enhance the already sizeable benefits.

Building on extensive experimental work and data, the EU-funded MUNDFAB project is developing the requisite modelling and simulation tools that will foster innovation via virtual fabrication of the next generation of nanoscale electronic devices.

Duration of project: January 1, 2020 - December 31, 2022


This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 871813.


Download the latest papers from MUNDFAB

Press Release

Modeling of Nanodevices - Start of the EU project MUNDFAB

Nanoelectronics for People – and People for Nanoelectronics

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Selected Public Deliverables


Public Deliverable D4.6
(January 2023)

Final Experimental Results on Laser Annealing


Public Deliverable D2.5
(December 2022)

Final Experimental Results on Silicidation of Si and SiGe Bulk Materials and Nanowires


Public Deliverable D4.7
(December 2022)

Complete Model for Alloy Redistribution and Doping, Calibrated with the Second Round of Experiments


Public Deliverable D6.2
(September 2022)

Report on the Integration of External KMC/LKMC Tools into the TCAD Toolchain


Public Deliverable D4.5
(July 2022)

Report on the First Version of Atomistic Studies and LKMC Models


Public Deliverable D5.1
(July 2022)

First Batch of Experimental Results Regarding the Electrical and Structural Characterization of Device Samples


Public Deliverable D2.1
(September 2021)

First Batch of Experimental Results on Heated Implants and SPER


Public Deliverable D2.2
(August 2021)

Atomistic Catalogue of Events for Calibration of LKMC Dedicated to Silicidation and First Batch of Experimental Results on Silicidation of Si Bulk Materials


Public Deliverable D3.3
(August 2021)

First Batch of Experimental Results on Epitaxy


Public Deliverable D4.3
(July 2021)

First Round of Experiments on Structural Modifications, Alloy Redistribution to Validate Model Predictions, Experimental Plan for Second Round


Public Deliverable D4.2
(April 2021)

Report on the First Round of Optical and Thermal Measurements


Public Deliverable D5.2
(April 2021)

Provisional Atomistic Catalogue of Chemical Reactions Relevant for Defect Formation


Public Deliverable D3.1
(July 2020)

Review of Experimental and Model State of the Art for Epitaxy of Si and SiGe Films by Chemical Vapor Deposition


Public Deliverable D4.1
(July 2020)

Specification Report for Laser Annealing Calibration: Literature Review, Missing Data, Experimental Plan


Public Deliverable D6.1
(May 2020)

Device Architectures and Processing of the Test Applications

Full Set of Public Deliverables

The full set of public deliverables is available here.