MUNDFAB - Modeling Unconventional Nanoscaled Device FABrication

Snapshot of a LKMC simulation of 3C-SiC epitaxial growth process obtained with the CNR LKMC tool developed within the H2020 project CHALLENGE. The simulation box is about 0.6 × 0.6 × 0.6 μm^3, only surface and defective structures (both point defects and dislocation loops associated to planar defects) are shown.

Motivation

Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things will require continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This is predicted to lead within less than a decade to a paradigm change towards the 3D sequential integration of nanosized structures.

While technology-computer aided design (TCAD) is indispensable now particularly for the early stages of industrial research and development, we face the situation that classical continuum tools lose their predictivity when going towards the nano world and towards the very low temperature processes required for 3D sequential integration. They are then neither able to predict the reduced electrical activation of dopants, nor topography effects like faceting, nor defect formation and growth.

Work in the MUNDFAB project

To overcome the insufficient state of models and tools for a predictive simulation of low-temperature processing of high-mobility layers like silicon-germanium alloys, dedicated experimental investigations will be performed for solid-phase epitaxial regrowth, epitaxial deposition, and nanosecond laser annealing. Model development will be carried out, based on the KMC and LKMC tools of Sentaurus Process, complemented by model development with own tools.

The own tools will be looped into the Sentaurus TCAD workflow so that in the end we will have a complete calibrated toolchain able to simulate the virtual fabrication of the 3D sequential integration of nanoscaled devices. This will allow continuing further on the success story of the use of TCAD for the early development of the next generations of unconventional nanoscaled electron devices.

Duration of project: January 1, 2020 - December 31, 2022

 

 Public Deliverable

"Device Architectures
and Processing of the Test
Applications"

 

 Public Deliverable

"Review of Experimental and Model State of the Art"

for epitaxy of Si and SiGe films by chemical vapor deposition