MUNDFAB - Modeling Unconventional Nanoscaled Device FABrication

Snapshot of a LKMC simulation of 3C-SiC epitaxial growth process obtained with the CNR LKMC tool developed within the H2020 project CHALLENGE. The simulation box is about 0.6 × 0.6 × 0.6 μm^3, only surface and defective structures (both point defects and dislocation loops associated to planar defects) are shown.


Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things requires continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This leads to a paradigm change towards the 3D sequential integration of nanosized structures. Regarding simulation, we face the situation that classical continuum tools are not sufficient any more for the nano world and the very low temperature processes required for 3D sequential integration.

Work in the MUNDFAB project

To overcome the insufficient state of models and tools for the simulation of low-temperature processing of high-mobility layers like silicon-germanium alloys, dedicated experimental investigations are performed for solid-phase epitaxial regrowth, epitaxial deposition, and nanosecond laser annealing. Model development is carried out, based on the KMC and LKMC tools of Sentaurus Process, complemented by model development with own tools. In the end we will have a complete calibrated toolchain which is able to simulate the processes for 3D sequential integration of nanoscaled devices. This will allow continuing further on the success story of the use of TCAD for the early development of the next generations of unconventional nanoscaled electron devices.

Duration of project: January 1, 2020 - December 31, 2022


This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 871813.

MUNDFAB project information at




Press Release
(October 2020)

"Start of the EU project


 Public Deliverable D3.1
(July 2020)

"Review of Experimental and Model State of the Art"

for epitaxy of Si and SiGe films by chemical vapor deposition


 Public Deliverable D4.1
(July 2020)

"Specification Report for Laser Annealing Calibration: Literature Review, Missing Data, Experimental Plan"


 Public Deliverable D6.1
(May 2020)

"Device Architectures
and Processing of the Test